| -Package / Case: |
TSMT-8 |
| -Vgs - Gate-Source Voltage: |
10 V |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
10 ns |
| -Manufacturer: |
ROHM Semiconductor |
| -Transistor Polarity: |
P-Channel |
| -Channel Mode: |
Enhancement |
| -Typical Turn-Off Delay Time: |
300 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
- 12 V |
| -Transistor Type: |
2 P-Channel |
| -Operating Temperature |
150°C (TJ) |
| -Categories |
Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| -Mounting Type |
Surface Mount |
| -Rds On (Max) @ Id, Vgs |
36 mOhm @ 4A, 4.5V |
| -Supplier Device Package |
TSMT8 |
| -Package / Case |
8-SMD, Flat Lead |
| -Current - Continuous Drain (Id) @ 25°C |
4A |
| -Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| -Configuration: |
Dual |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
180 ns |
| -Forward Transconductance - Min: |
5.5 S |
| -Series: |
QS8J2 |
| -Factory Pack Quantity: |
3000 |
| -Brand: |
ROHM Semiconductor |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
4 A |
| -Rise Time: |
60 ns |
| -Maximum Operating Temperature: |
+ 150 C |
| -FET Feature |
Logic Level Gate, 1.5V Drive |
| -FET Type |
2 P-Channel (Dual) |
| -Input Capacitance (Ciss) (Max) @ Vds |
1940pF @ 6V |
| -Vgs(th) (Max) @ Id |
1V @ 1mA |
| -Drain to Source Voltage (Vdss) |
12V |
| -Power - Max |
550mW |
| -Lead Free Status / RoHS Status |
1 |
