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QS6M3TR

QS6M3 Series Dual N/ P-Channel 30 V/20 V 1.25 W 360 mOhm Drive MosFet SMT-TSMT-6

Manufacturer ROHM Semiconductor
MPN QS6M3TR
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet QS6M3TR.pdf
SP1000
Dollar $0.5488
RMB ¥4.55814
Stock type SP1000
Stock num 2600
Stepped
num price
1+ $0.5488
10+ $0.47334
100+ $0.35378
500+ $0.27832
1000+ $0.21462
3000+ $0.19502
6000+ $0.18228
SP1038
Dollar $0.11197
RMB ¥0.92998
Stock type SP1038
Stock num 2157
Stepped
num price
1+ $0.11197

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Product parameter

-Online Catalog N and P-Channel Logic Level Gate FETs
-Product Training Modules MOSFETs
-PCN Design/Specification TSMT Package Updates 24/Dec/2014
-Operating Temperature 150°C (TJ)
-Categories Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays
-Mounting Type Surface Mount
-Rds On (Max) @ Id, Vgs 230 mOhm @ 1.5A, 4.5V
-Supplier Device Package TSMT6 (SC-95)
-Package / Case SOT-23-6 Thin, TSOT-23-6
-Current - Continuous Drain (Id) @ 25°C 1.5A
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Datasheets QS6M3
-Featured Product MOSFET ECOMOS
-ECCN EAR99
-FET Feature Logic Level Gate
-FET Type N and P-Channel
-Input Capacitance (Ciss) (Max) @ Vds 80pF @ 10V
-Vgs(th) (Max) @ Id 1.5V @ 1mA
-Drain to Source Voltage (Vdss) 30V, 20V
-Power - Max 1.25W
-Lead Free Status / RoHS Status 1
-Base Part Number *M3

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