EMH60T2R

TRANS 2NPN PREBIAS 0.15W EMT6

Manufacturer ROHM Semiconductor MPN EMH60T2R SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet EMH60T2R.pdf EMH60T2R.pdf EMH60T2R.pdf

SP1028 Dollar $0.4123 RMB ￥3.42442 Stock type SP1028 Stock num 50 Stepped num price 1+ $0.4123 10+ $0.3379 50+ $0.16585 100+ $0.1581 500+ $0.093 1000+ $0.09145 2000+ $0.0837 4000+ $0.0837 SP1036 Dollar $0.04638 RMB ￥0.38522 Stock type SP1036 Stock num 15270 Stepped num price 1+ $0.04638 500+ $0.03092 4000+ $0.02687 8000+ $0.02398

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Product parameter

-Frequency - Transition	250MHz
-Current - Collector (Ic) (Max)	100mA
-Voltage - Collector Emitter Breakdown (Max)	50V
-Supplier Device Package	EMT6
-Package / Case	SOT-563, SOT-666
-Part Status	Active
-Current - Collector Cutoff (Max)	500nA
-Moisture Sensitivity Level (MSL)	1 (Unlimited)
-Categories	Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Resistor - Base (R1)	2.2 kOhms
-Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 5mA
-Transistor Type	2 NPN - Pre-Biased (Dual)
-Power - Max	150mW
-Manufacturer	Rohm Semiconductor
-DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V