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| -FET Type | MOSFET N-Channel, Metal Oxide |
| -Drain to Source Voltage (Vdss) | 1200V |
| -Package / Case | TO-247-3 |
| -Operating Temperature | 175°C (TJ) |
| -Input Capacitance (Ciss) @ Vds | 2080pF @ 800V |
| -Vgs(th) (Max) @ Id | 4V @ 4.4mA |
| -Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| -FET Feature | Silicon Carbide (SiC) |
| -Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| -Mounting Type | Through Hole |
| -Power - Max | 262W |
| -Gate Charge (Qg) @ Vgs | 106nC @ 18V |
| -Rds On (Max) @ Id, Vgs | 117 mOhm @ 10A, 18V |
| -RoHS | Lead free / RoHS Compliant |
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