PD85035-E

PD85035-E Series 870 MHz 35 W 40 V N-Channel RF Power Transistor - POWERSO-10RF

Manufacturer STMicroelectronics MPN PD85035-E SPQ 1 ECCN EAR99 Schedule B -- RoHS -- Datasheet PD85035-E.pdf

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Product parameter

-Packaging:	Tube
-Output Power:	35 W
-Manufacturer:	STMicroelectronics
-Pd - Power Dissipation:	95 W
-Transistor Polarity:	N-Channel
-Factory Pack Quantity:	50
-Brand:	STMicroelectronics
-Package / Case:	PowerSO-12
-Id - Continuous Drain Current:	8 A
-Configuration:	Single
-Type:	RF Power MOSFET
-Maximum Operating Temperature:	+ 165 C
-Operating Frequency:	870 MHz
-Gain:	14.9 dB
-Series:	PD85035-E
-Minimum Operating Temperature:	- 65 C
-Channel Mode:	Enhancement
-Technology:	Si
-RoHS:	Details
-Product Category:	RF MOSFET Transistors
-Vds - Drain-Source Breakdown Voltage:	40 V
-Vgs - Gate-Source Voltage:	- 500 mV, + 15 V
-Mounting Style:	SMD/SMT
-ECCN	EAR99