| -FET Feature |
Logic Level Gate |
| -Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| -Drain to Source Voltage (Vdss) |
20V |
| -Current - Continuous Drain (Id) @ 25°C |
8.9A |
| -Part Status |
Obsolete |
| -Manufacturer |
Infineon Technologies |
| -Series |
HEXFET® |
| -Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| -Operating Temperature |
-55°C ~ 150°C (TJ) |
| -Packaging |
Tube |
| -Rds On (Max) @ Id, Vgs |
18.3 mOhm @ 8.9A, 10V |
| -Power - Max |
2W |
| -Supplier Device Package |
8-SO |
| -Gate Charge (Qg) @ Vgs |
7.4nC @ 4.5V |
| -Category |
Discrete Semiconductor Products |
| -FET Type |
2 N-Channel (Dual) |
| -Family |
Transistors - FETs, MOSFETs - Arrays |
| -Mounting Type |
Surface Mount |
| -Input Capacitance (Ciss) @ Vds |
540pF @ 10V |
