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SSM3J56MFV,L3F

MOSFET P-CH 20V 0.8A VESM

Manufacturer Toshiba
MPN SSM3J56MFV,L3F
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-FET Feature Logic Level Gate, 1.2V Drive
-Package / Case SOT-723
-Drain to Source Voltage (Vdss) 20V
-Current - Continuous Drain (Id) @ 25°C 800mA (Ta)
-Category Discrete Semiconductor Products
-FET Type MOSFET P-Channel, Metal Oxide
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 100pF @ 10V
-Rds On (Max) @ Id, Vgs 390 mOhm @ 800mA, 4.5V
-Power - Max 150mW
-Supplier Device Package VESM
-Part Status Active
-Manufacturer Toshiba Semiconductor and Storage
-Family Transistors - FETs, MOSFETs - Single
-Operating Temperature 150°C (TJ)
-Packaging Cut Tape (CT)

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