| -Resistor - Base (R1) (Ohms) |
2.2k |
| -Vce Saturation (Max) @ Ib, Ic |
150mV @ 500µA, 10mA / 355mV @ 300mA, 3A |
| -Power - Max |
1.5W |
| -Resistor - Emitter Base (R2) (Ohms) |
2.2k |
| -Current - Collector (Ic) (Max) |
100mA, 3A |
| -Category |
Discrete Semiconductor Products |
| -Voltage - Collector Emitter Breakdown (Max) |
50V, 20V |
| -Mounting Type |
Surface Mount |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 20mA, 5V / 150 @ 2A, 2V |
| -Frequency - Transition |
100MHz |
| -Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| -Transistor Type |
1 NPN Pre-Biased, 1 PNP |
| -Supplier Device Package |
8-SO |
| -Part Status |
Obsolete |
| -Manufacturer |
NXP Semiconductors |
| -Family |
Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| -Current - Collector Cutoff (Max) |
1µA, 100nA |
| -Packaging |
Cut Tape (CT) |
