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RN1110MFV,L3F

TRANS PREBIAS NPN 0.15W VESM

Manufacturer Toshiba
MPN RN1110MFV,L3F
SPQ 8000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
-Package / Case SOT-723
-Transistor Type NPN - Pre-Biased
-Current - Collector (Ic) (Max) 100mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
-Resistor - Base (R1) (Ohms) 4.7k
-Power - Max 150mW
-Supplier Device Package VESM
-Part Status Discontinued
-Manufacturer Toshiba Semiconductor and Storage
-Family Transistors - Bipolar (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 100nA (ICBO)
-Packaging Cut Tape (CT)

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