CEU6601

1 P-Channel Enhancement Mode Field Effect Transistor

Manufacturer CET-MOS MPN CEU6601 SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet CEU6601.pdf

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Product parameter

-FET Type	1 P-Channel
-Drain to Source Voltage (Vdss)	-60V
-Gate Charge (Qg) (Max) @ Vgs	22.6nC @ 10V
-Pd	43W
-Supplier Device Package	TO-252
-Rds On (Max) @ Id, Vgs	850 mOhm @ 7A,10V
-Thermal Resistance @ Natural	3.5℃/W
-Configuration	Single