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BCR521E6327HTSA1

TRANS PREBIAS NPN 0.33W SOT23-3

Manufacturer Infineon Technologies
MPN BCR521E6327HTSA1
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
-Resistor - Base (R1) (Ohms) 1k
-Power - Max 330mW
-Resistor - Emitter Base (R2) (Ohms) 1k
-Current - Collector (Ic) (Max) 500mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA, 5V
-Frequency - Transition 100MHz
-Package / Case TO-236-3, SC-59, SOT-23-3
-Transistor Type NPN - Pre-Biased
-Supplier Device Package PG-SOT23-3
-Part Status Last Time Buy
-Manufacturer Infineon Technologies
-Family Transistors - Bipolar (BJT) - Single, Pre-Biased
-Current - Collector Cutoff (Max) 100nA (ICBO)
-Packaging Digi-Reel®

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