| -Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA |
| -Resistor - Base (R1) (Ohms) |
4.7k |
| -Power - Max |
200mW |
| -Resistor - Emitter Base (R2) (Ohms) |
47k |
| -Current - Collector (Ic) (Max) |
100mA |
| -Category |
Discrete Semiconductor Products |
| -Voltage - Collector Emitter Breakdown (Max) |
50V |
| -Mounting Type |
Surface Mount |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
70 @ 5mA, 5V |
| -Frequency - Transition |
160MHz |
| -Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| -Transistor Type |
PNP - Pre-Biased |
| -Supplier Device Package |
PG-SOT23-3 |
| -Part Status |
Last Time Buy |
| -Manufacturer |
Infineon Technologies |
| -Family |
Transistors - Bipolar (BJT) - Single, Pre-Biased |
| -Current - Collector Cutoff (Max) |
100nA (ICBO) |
| -Packaging |
Cut Tape (CT) |
