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DMN61D8LVT-7

Dual N-Channel 60 V 1.8 Ohm Surface Mount Power Mosfet - TSOT-26

Manufacturer Diodes Incorporated
MPN DMN61D8LVT-7
SPQ 3000
ECCN EAR99
Schedule B --
RoHS --
Datasheet --
SP1036
Dollar $0.15459
RMB ¥1.28397
Stock type SP1036
Stock num 481
Stepped
num price
1+ $0.15459
200+ $0.11847
1500+ $0.10301
3000+ $0.08958

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Product parameter

-Packaging: Reel
-Qg - Gate Charge: 0.74 nC, 0.74 nC
-Pd - Power Dissipation: 820 mW
-Package / Case: TSOT-26-6
-Configuration: Dual
-Mounting Style: SMD/SMT
-Fall Time: 440 ns, 440 ns
-Manufacturer: Diodes Incorporated
-Transistor Polarity: N-Channel
-Channel Mode: Enhancement
-Typical Turn-Off Delay Time: 582 ns, 582 ns
-Product Category: MOSFET
-Vds - Drain-Source Breakdown Voltage: 60 V, 60 V
-Transistor Type: 2 N-Channel
-ECCN EAR99
-Rds On - Drain-Source Resistance: 2.4 Ohms, 2.4 Ohms
-Minimum Operating Temperature: - 55 C
-Technology: Si
-Vgs th - Gate-Source Threshold Voltage: 1.3 V, 1.3 V
-Vgs - Gate-Source Voltage: +/- 12 V
-Number of Channels: 2 Channel
-Typical Turn-On Delay Time: 131 ns, 131 ns
-Series: DMN61
-Factory Pack Quantity: 3000
-Brand: Diodes Incorporated
-RoHS:  Details
-Id - Continuous Drain Current: 630 mA, 630 mA
-Rise Time: 301 ns, 301 ns
-Maximum Operating Temperature: + 150 C

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