| -Packaging: |
Reel |
| -Qg - Gate Charge: |
0.74 nC, 0.74 nC |
| -Pd - Power Dissipation: |
820 mW |
| -Package / Case: |
TSOT-26-6 |
| -Configuration: |
Dual |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
440 ns, 440 ns |
| -Manufacturer: |
Diodes Incorporated |
| -Transistor Polarity: |
N-Channel |
| -Channel Mode: |
Enhancement |
| -Typical Turn-Off Delay Time: |
582 ns, 582 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
60 V, 60 V |
| -Transistor Type: |
2 N-Channel |
| -ECCN |
EAR99 |
| -Rds On - Drain-Source Resistance: |
2.4 Ohms, 2.4 Ohms |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Vgs th - Gate-Source Threshold Voltage: |
1.3 V, 1.3 V |
| -Vgs - Gate-Source Voltage: |
+/- 12 V |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
131 ns, 131 ns |
| -Series: |
DMN61 |
| -Factory Pack Quantity: |
3000 |
| -Brand: |
Diodes Incorporated |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
630 mA, 630 mA |
| -Rise Time: |
301 ns, 301 ns |
| -Maximum Operating Temperature: |
+ 150 C |
