-Packaging: |
Reel |
-Qg - Gate Charge: |
0.74 nC, 0.74 nC |
-Pd - Power Dissipation: |
820 mW |
-Package / Case: |
TSOT-26-6 |
-Configuration: |
Dual |
-Mounting Style: |
SMD/SMT |
-Fall Time: |
440 ns, 440 ns |
-Manufacturer: |
Diodes Incorporated |
-Transistor Polarity: |
N-Channel |
-Channel Mode: |
Enhancement |
-Typical Turn-Off Delay Time: |
582 ns, 582 ns |
-Product Category: |
MOSFET |
-Vds - Drain-Source Breakdown Voltage: |
60 V, 60 V |
-Transistor Type: |
2 N-Channel |
-ECCN |
EAR99 |
-Rds On - Drain-Source Resistance: |
2.4 Ohms, 2.4 Ohms |
-Minimum Operating Temperature: |
- 55 C |
-Technology: |
Si |
-Vgs th - Gate-Source Threshold Voltage: |
1.3 V, 1.3 V |
-Vgs - Gate-Source Voltage: |
+/- 12 V |
-Number of Channels: |
2 Channel |
-Typical Turn-On Delay Time: |
131 ns, 131 ns |
-Series: |
DMN61 |
-Factory Pack Quantity: |
3000 |
-Brand: |
Diodes Incorporated |
-RoHS: |
Details |
-Id - Continuous Drain Current: |
630 mA, 630 mA |
-Rise Time: |
301 ns, 301 ns |
-Maximum Operating Temperature: |
+ 150 C |