NE3509M04-T2-A

AMP HJ-FET 2GHZ SOT-343

Manufacturer California Eastern Laboratories MPN NE3509M04-T2-A SPQ 3000 ECCN -- Schedule B -- RoHS -- Datasheet NE3509M04-T2-A.pdf

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Product parameter

-Operating Frequency:	2 GHz
-Product:	RF JFET
-Gain:	17.5 dB
-Manufacturer:	CEL
-Transistor Polarity:	N-Channel
-Technology:	GaAs
-RoHS:	Details
-Vgs - Gate-Source Breakdown Voltage:	- 3 V
-Id - Continuous Drain Current:	60 mA
-NF - Noise Figure:	0.4 dB
-Transistor Type:	HFET
-Maximum Operating Temperature:	+ 150 C
-P1dB - Compression Point:	11 dBm
-Packaging:	Reel
-Forward Transconductance - Min:	80 mS
-Pd - Power Dissipation:	150 mW
-Factory Pack Quantity:	3000
-Brand:	CEL
-Package / Case:	FTSMM-4 (M04)
-Product Category:	RF JFET Transistors
-Vds - Drain-Source Breakdown Voltage:	4 V
-Type:	GaAs HFET
-Mounting Style:	SMD/SMT