| -Product: |
RF JFET |
| -Operating Frequency: |
2 GHz |
| -Forward Transconductance - Min: |
80 mS |
| -Pd - Power Dissipation: |
150 mW |
| -Factory Pack Quantity: |
1 |
| -Brand: |
CEL |
| -Package / Case: |
FTSMM-4 (M04) |
| -Product Category: |
RF JFET Transistors |
| -Vds - Drain-Source Breakdown Voltage: |
4 V |
| -Type: |
GaAs HFET |
| -Gate-Source Cutoff Voltage: |
- 0.5 V |
| -Maximum Operating Temperature: |
+ 150 C |
| -P1dB - Compression Point: |
11 dBm |
| -Gain: |
17.5 dB |
| -Manufacturer: |
CEL |
| -Transistor Polarity: |
N-Channel |
| -Technology: |
GaAs |
| -RoHS: |
Details |
| -Vgs - Gate-Source Breakdown Voltage: |
- 3 V |
| -Id - Continuous Drain Current: |
60 mA |
| -NF - Noise Figure: |
0.4 dB |
| -Transistor Type: |
HFET |
| -Mounting Style: |
SMD/SMT |
