| -Operating Temperature - Junction |
-55°C ~ 175°C |
| -Capacitance @ Vr, F |
750pF @ 1V, 1MHz |
| -Supplier Device Package |
PG-TO220-2 |
| -Diode Type |
Silicon Carbide Schottky |
| -Category |
Discrete Semiconductor Products |
| -Reverse Recovery Time (trr) |
0ns |
| -Series |
thinQ!™ |
| -Mounting Type |
Through Hole |
| -Voltage - Forward (Vf) (Max) @ If |
1.8V @ 15A |
| -Current - Average Rectified (Io) |
15A (DC) |
| -Package / Case |
TO-220-2 |
| -Part Status |
End of Life |
| -Speed |
No Recovery Time > 500mA (Io) |
| -Manufacturer |
Infineon Technologies |
| -Current - Reverse Leakage @ Vr |
360µA @ 1200V |
| -Family |
Diodes - Rectifiers - Single |
| -Voltage - DC Reverse (Vr) (Max) |
1200V (1.2kV) |
| -Packaging |
Tube |
