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SGB02N120ATMA1

IGBT 1200V 6.2A 62W TO263-3

Manufacturer Infineon Technologies
MPN SGB02N120ATMA1
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet SGB02N120ATMA1.pdf

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Product parameter

-Current - Collector Pulsed (Icm) 9.6A
-Power - Max 62W
-IGBT Type NPT
-Td (on/off) @ 25°C 23ns/260ns
-Part Status Not For New Designs
-Manufacturer Infineon Technologies
-Voltage - Collector Emitter Breakdown (Max) 1200V
-Mounting Type Surface Mount
-Switching Energy 220µJ
-Packaging Tape & Reel (TR)
-Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-Test Condition 800V, 2A, 91 Ohm, 15V
-Supplier Device Package PG-TO263-3
-Current - Collector (Ic) (Max) 6.2A
-Category Discrete Semiconductor Products
-Gate Charge 11nC
-Family Transistors - IGBTs - Single
-Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 2A
-Input Type Standard

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