| -Operating Frequency: |
200 MHz |
| -Manufacturer: |
Advanced Semiconductor, Inc. |
| -Pd - Power Dissipation: |
270 W |
| -Technology: |
Si |
| -RoHS: |
Details |
| -Product Category: |
RF MOSFET Transistors |
| -Vgs th - Gate-Source Threshold Voltage: |
3 V |
| -Configuration: |
Single |
| -Type: |
RF Power MOSFET |
| -Maximum Operating Temperature: |
+ 200 C |
| -Packaging: |
Tray |
| -Minimum Operating Temperature: |
- 65 C |
| -Transistor Polarity: |
N-Channel |
| -Brand: |
Advanced Semiconductor, Inc. |
| -Package / Case: |
Case 211-11 |
| -Id - Continuous Drain Current: |
13 A |
| -Vds - Drain-Source Breakdown Voltage: |
65 V |
| -Vgs - Gate-Source Voltage: |
40 V |
| -Mounting Style: |
SMD/SMT |
