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MJD122-1

MJD122-1 Series 100 V 8 A SMT NPN Darlington Transistor - TO-252-3

制造商 STMicroelectronics
制造商零件编号 MJD122-1
标准包装 1
ECCN EAR99
Schedule B --
RoHS --
规格说明书 MJD122-1.pdf

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产品参数

-Maximum Collector Cut-off Current: 10 uA
-Maximum DC Collector Current: 5 A
-Width: 2.4 mm
-Collector- Base Voltage VCBO: 100 V
-DC Collector/Base Gain hfe Min: 100
-Series: MJD122
-Transistor Polarity: NPN
-Brand: STMicroelectronics
-Product Category: Darlington Transistors
-Height: 7.2 mm
-Mounting Style: Through Hole
-ECCN EAR99
-Emitter- Base Voltage VEBO: 5 V
-DC Current Gain hFE Max: 12000
-Packaging: Tube
-Length: 6.6 mm
-Manufacturer: STMicroelectronics
-Pd - Power Dissipation: 20 W
-Factory Pack Quantity: 75
-Package / Case: TO-252-2
-Collector- Emitter Voltage VCEO Max: 100 V
-Configuration: Single
-Maximum Operating Temperature: + 150 C

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