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PD57018STR-E

TRANSISTOR RF POWERSO-10

Manufacturer STMicroelectronics
MPN PD57018STR-E
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Packaging: Reel
-Operating Frequency: 1 GHz
-Rds On - Drain-Source Resistance: 760 mOhms
-Pd - Power Dissipation: 31.7 W
-Package / Case: PowerSO-10RF (Straight Lead)
-Configuration: Single
-Mounting Style: SMD/SMT
-Length: 7.5 mm
-Series: PD57018-E
-Factory Pack Quantity: 600
-Brand: STMicroelectronics
-Product Category: RF MOSFET Transistors
-Vds - Drain-Source Breakdown Voltage: 65 V
-Maximum Operating Temperature: + 150 C
-Width: 9.4 mm
-Output Power: 18 W
-Minimum Operating Temperature: - 65 C
-Technology: Si
-Height: 3.5 mm
-Vgs - Gate-Source Voltage: +/- 20 V
-Gain: 16.5 dB at 945 MHz
-Manufacturer: STMicroelectronics
-Transistor Polarity: N-Channel
-Channel Mode: Enhancement
-RoHS:  Details
-Id - Continuous Drain Current: 2.5 A
-Type: RF Power MOSFET

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