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IXYN82N120C3H1

Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B

Manufacturer IXYS Corporation
MPN IXYN82N120C3H1
SPQ 10
ECCN EAR99
Schedule B --
RoHS --
Datasheet IXYN82N120C3H1.pdf

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Product parameter

-Collector-Emitter Saturation Voltage: 2.75 V
-Continuous Collector Current Ic Max: 105 A
-Series: IXYN82N120
-Continuous Collector Current at 25 C: 105 A
-Factory Pack Quantity: 10
-Tradename: XPT
-Package / Case: SOT-227B-4
-Product Category: IGBT Transistors
-Configuration: Single
-Mounting Style: SMD/SMT
-Maximum Operating Temperature: + 150 C
-Packaging: Tube
-Manufacturer: IXYS
-Pd - Power Dissipation: 500 W
-Minimum Operating Temperature: - 55 C
-Brand: IXYS
-RoHS:  Details
-Gate-Emitter Leakage Current: 100 nA
-Collector- Emitter Voltage VCEO Max: 1200 V
-Unit Weight: 1.340411 oz
-Maximum Gate Emitter Voltage: 30 V
-ECCN EAR99

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