English 简体中文 日本語

IXYN100N65C3H1

Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W

Manufacturer IXYS Corporation
MPN IXYN100N65C3H1
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet IXYN100N65C3H1.pdf

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Collector-Emitter Saturation Voltage: 1.85 V
-Continuous Collector Current Ic Max: 166 A
-Series: IXYN100N65
-Continuous Collector Current at 25 C: 166 A
-Factory Pack Quantity: 10
-Tradename: XPT
-Package / Case: SOT-227B-4
-Product Category: IGBT Transistors
-Configuration: Single
-Mounting Style: SMD/SMT
-Maximum Operating Temperature: + 175 C
-Packaging: Tube
-Manufacturer: IXYS
-Pd - Power Dissipation: 600 W
-Minimum Operating Temperature: - 55 C
-Brand: IXYS
-RoHS:  Details
-Gate-Emitter Leakage Current: 100 nA
-Collector- Emitter Voltage VCEO Max: 650 V
-Unit Weight: 1.340411 oz
-Maximum Gate Emitter Voltage: 30 V

Copyright © 1997-2013 NetEase. All Rights Reserved.