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IXXN110N65C4H1

GenX4™ XPT™ 640 V 210 A Extreme Light Punch Through IGBT - SOT227B

Manufacturer IXYS Corporation
MPN IXXN110N65C4H1
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet IXXN110N65C4H1.pdf

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Product parameter

-Product: IGBT Silicon Modules
-Packaging: Tube
-Series: IXXN110N65
-Continuous Collector Current at 25 C: 210 A
-Factory Pack Quantity: 10
-Tradename: XPT
-Package / Case: SOT-227B-4
-Product Category: IGBT Modules
-Configuration: Single Dual Emitter
-Mounting Style: SMD/SMT
-Maximum Operating Temperature: + 175 C
-Collector-Emitter Saturation Voltage: 1.98 V
-Manufacturer: IXYS
-Pd - Power Dissipation: 750 W
-Minimum Operating Temperature: - 55 C
-Brand: IXYS
-RoHS:  Details
-Gate-Emitter Leakage Current: 100 nA
-Collector- Emitter Voltage VCEO Max: 650 V
-Unit Weight: 1.340411 oz
-Maximum Gate Emitter Voltage: 20 V
-ECCN EAR99

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