| -Width: |
5.21 mm |
| -Rds On - Drain-Source Resistance: |
43 mOhms |
| -Minimum Operating Temperature: |
- 40 C |
| -Technology: |
Si |
| -Vgs th - Gate-Source Threshold Voltage: |
4 V |
| -Configuration: |
Single |
| -Unit Weight: |
1.340411 oz |
| -Number of Channels: |
1 Channel |
| -Typical Turn-On Delay Time: |
22 ns |
| -Manufacturer: |
Infineon |
| -Transistor Polarity: |
N-Channel |
| -Channel Mode: |
Enhancement |
| -Part # Aliases: |
IPW65R048CFDAFKSA1 IPW65R048CFDAXK SP000895318 |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
63.3 A |
| -Rise Time: |
10 ns |
| -Maximum Operating Temperature: |
+ 150 C |
| -Packaging: |
Tube |
| -Qg - Gate Charge: |
270 nC |
| -Pd - Power Dissipation: |
500 W |
| -Package / Case: |
TO-247-3 |
| -Height: |
21.1 mm |
| -Vgs - Gate-Source Voltage: |
+/- 20 V |
| -Mounting Style: |
Through Hole |
| -Fall Time: |
4 ns |
| -Length: |
16.13 mm |
| -Series: |
XPW65R048 |
| -Factory Pack Quantity: |
240 |
| -Brand: |
Infineon Technologies |
| -Typical Turn-Off Delay Time: |
85 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
650 V |
| -Transistor Type: |
1 N-Channel |
