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HN3C10FUTE85LF

TRANSISTOR NPN US6

Manufacturer Toshiba
MPN HN3C10FUTE85LF
SPQ 3000
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
-Package / Case 6-TSSOP, SC-88, SOT-363
-Gain 11.5dB
-Supplier Device Package US6
-Part Status Active
-Manufacturer Toshiba Semiconductor and Storage
-Family Transistors - Bipolar (BJT) - RF
-DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10V
-Frequency - Transition 7GHz
-Power - Max 200mW
-Transistor Type 2 NPN (Dual)
-Current - Collector (Ic) (Max) 80mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 12V
-Mounting Type Surface Mount
-Packaging Digi-Reel®

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