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HN1C01FYTE85LF

TRANS 2NPN 50V 0.15A SM6

Manufacturer Toshiba
MPN HN1C01FYTE85LF
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Maximum DC Collector Current: 150 mA
-Collector-Emitter Saturation Voltage: 0.1 V
-Packaging: Reel
-Continuous Collector Current: 150 mA
-Manufacturer: Toshiba
-Pd - Power Dissipation: 300 mW
-Factory Pack Quantity: 3000
-RoHS:  Details
-Product Category: Bipolar Transistors - BJT
-Gain Bandwidth Product fT: 80 MHz
-Unit Weight: 0.001058 oz
-Emitter- Base Voltage VEBO: 5 V
-DC Current Gain hFE Max: 400
-Collector- Base Voltage VCBO: 60 V
-DC Collector/Base Gain hfe Min: 120
-Series: HN1C01
-Transistor Polarity: NPN
-Brand: Toshiba
-Package / Case: SOT-26
-Collector- Emitter Voltage VCEO Max: 50 V
-Configuration: Dual
-Mounting Style: SMD/SMT

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