| -Collector- Base Voltage VCBO: |
12 V |
| -Operating Frequency: |
8000 MHz (Typ) |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Height: |
1.5 mm (Max) |
| -Configuration: |
Quint |
| -Emitter- Base Voltage VEBO: |
5.5 V |
| -DC Current Gain hFE Max: |
40 at 10 mA at 2 V |
| -Continuous Collector Current: |
0.065 A |
| -Manufacturer: |
Intersil |
| -Transistor Polarity: |
NPN |
| -Brand: |
Intersil |
| -Product Category: |
RF Bipolar Transistors |
| -Type: |
RF Bipolar Small Signal |
| -Maximum Operating Temperature: |
+ 125 C |
| -Width: |
4 mm (Max) |
| -Packaging: |
Tube |
| -Pd - Power Dissipation: |
150 mW |
| -Package / Case: |
SOIC-16 Narrow |
| -Gain Bandwidth Product fT: |
8000 MHz (Typ) |
| -Unit Weight: |
0.019312 oz |
| -Maximum DC Collector Current: |
0.065 A |
| -Length: |
10 mm (Max) |
| -DC Collector/Base Gain hfe Min: |
40 at 10 mA at 2 V |
| -Series: |
HFA3127 |
| -Factory Pack Quantity: |
48 |
| -RoHS: |
Details |
| -Collector- Emitter Voltage VCEO Max: |
8 V |
| -Transistor Type: |
Bipolar |
| -ECCN |
EAR99 |
