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STGD3HF60HDT4

STGD3HF60HD Series 600 V 4.5 A, Very Fast IGBT with Ultrafast Diode - TO-252

Manufacturer STMicroelectronics
MPN STGD3HF60HDT4
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet --

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Product parameter

-Series: STGD3HF60HD
-Packaging: Reel
-Pd - Power Dissipation: 38 W
-Minimum Operating Temperature: - 55 C
-Brand: STMicroelectronics
-Gate-Emitter Leakage Current: 100 nA
-Product Category: IGBT Transistors
-Unit Weight: 0.009185 oz
-Maximum Gate Emitter Voltage: 20 V
-ECCN EAR99
-Manufacturer: STMicroelectronics
-Collector-Emitter Saturation Voltage: 2.95 V
-Continuous Collector Current at 25 C: 7.5 A
-Factory Pack Quantity: 2500
-RoHS:  Details
-Package / Case: DPAK
-Collector- Emitter Voltage VCEO Max: 600 V
-Mounting Style: SMD/SMT
-Maximum Operating Temperature: + 150 C

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