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MBT3946DW1T1G

MBT Series 40 V 200 mA NPN/PNP Silicon Dual General Purpose Transistor - SOT-363

Manufacturer onsemi
MPN MBT3946DW1T1G
SPQ 1
ECCN EAR99
Schedule B --
RoHS --
Datasheet MBT3946DW1T1G.pdf
SP1027
Dollar $0.04108
RMB ¥0.3412
Stock type SP1027
Stock num 102000
Stepped
num price
3000+ $0.04108
9000+ $0.03472
24000+ $0.03255
45000+ $0.02976
99000+ $0.02744
SP1038
Dollar $0.02723
RMB ¥0.22616
Stock type SP1038
Stock num 2065
Stepped
num price
1+ $0.02723
SP1036
Dollar $0.04436
RMB ¥0.36844
Stock type SP1036
Stock num 3641
Stepped
num price
1+ $0.04436
200+ $0.02861
1500+ $0.025
3000+ $0.02211

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Product parameter

-Packaging: Reel
-Width: 1.25 mm
-Minimum Operating Temperature: - 55 C
-Package / Case: SC-70-6
-Gain Bandwidth Product fT: 250 MHz, 300 MHz
-Unit Weight: 0.000988 oz
-Emitter- Base Voltage VEBO: 6 V at NPN, 5 V at PNP
-Length: 2 mm
-DC Collector/Base Gain hfe Min: 40
-Series: MBT3946DW1T1
-Factory Pack Quantity: 3000
-Part # Aliases: MBT3946DW1T2G
-Product Category: Bipolar Transistors - BJT
-Maximum Operating Temperature: + 150 C
-Collector- Base Voltage VCBO: 40 V, 60 V
-Collector-Emitter Saturation Voltage: - 0.4 V, + 0.3 V
-Pd - Power Dissipation: 150 mW
-Height: 0.9 mm
-Configuration: Dual
-Mounting Style: SMD/SMT
-Maximum DC Collector Current: 0.2 A
-Continuous Collector Current: 0.2 A
-Manufacturer: ON Semiconductor
-Transistor Polarity: NPN
-Brand: ON Semiconductor
-RoHS:  Details
-Collector- Emitter Voltage VCEO Max: 40 V
-ECCN EAR99

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