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GB05SLT12-252

Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 5A TO-252-2

制造商 GeneSiC Semiconductor
制造商零件编号 GB05SLT12-252
标准包装 2500
ECCN --
Schedule B --
RoHS RoHS Compliant
规格说明书 GB05SLT12-252.pdf GB05SLT12-252.pdf

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产品参数

-Operating Temperature - Junction *
-Capacitance @ Vr, F 260pF @ 1V, 1MHz
-Supplier Device Package TO-252
-Diode Type Silicon Carbide Schottky
-Category Discrete Semiconductor Products
-Reverse Recovery Time (trr) 0ns
-Series SiC Schottky MPS™
-Mounting Type Surface Mount
-Voltage - Forward (Vf) (Max) @ If 1.8V @ 2A
-RoHS Lead free / RoHS Compliant
-ECCN Number EAR99
-Configuration Single
-Current (IF) (Per Diode) 5 A
-Switching Speed (ts) < 10 ns
-Minimum Operating Temperature -55 ℃
-Unit Weight 0.3 g
-Current - Average Rectified (Io) 5A
-Package / Case TO-252-2
-Part Status Active
-Speed No Recovery Time > 500mA (Io)
-Manufacturer GeneSiC Semiconductor
-Current - Reverse Leakage @ Vr 50µA @ 1200V
-Family Diodes - Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 1200V (1.2kV)
-Packaging Tape and Reel
-HTS Code 8541.10.0080
-Mounting Style Surface Mount
-Blocking Voltage (VR) 1200 V
-Reverse Recovery Time (trr) 0 ns
-Forward Voltage (VF) (Typical) (25°C) 1.5 V
-Maximum Operating Temperature 175℃
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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