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GAP3SLT33-220FP

Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 3300V 0.3A TO-220-FP

Manufacturer GeneSiC Semiconductor
MPN GAP3SLT33-220FP
SPQ 50
ECCN --
Schedule B --
RoHS RoHS Compliant
Datasheet GAP3SLT33-220FP.pdf GAP3SLT33-220FP.pdf

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Product parameter

-Operating Temperature - Junction -55°C ~ 175°C
-Capacitance @ Vr, F 42pF @ 1V, 1MHz
-Supplier Device Package TO-220FP
-Diode Type Silicon Carbide Schottky
-Category Discrete Semiconductor Products
-Reverse Recovery Time (trr) 0ns
-Series SiC Schottky MPS™
-Mounting Type Through Hole
-Voltage - Forward (Vf) (Max) @ If 1.7V @ 300mA
-RoHS Lead free / RoHS Compliant
-ECCN Number EAR99
-Configuration Single
-Current (IF) (Per Diode) 0.3 A
-Switching Speed (ts) < 10 ns
-Minimum Operating Temperature -55 ℃
-Unit Weight 0.2 g
-Current - Average Rectified (Io) 300mA
-Package / Case TO-220-2FP
-Part Status Active
-Speed No Recovery Time > 500mA (Io)
-Manufacturer GeneSiC Semiconductor
-Current - Reverse Leakage @ Vr 5µA @ 3300V
-Family Diodes - Rectifiers - Single
-Voltage - DC Reverse (Vr) (Max) 3300V (3.3kV)
-Packaging Tube
-HTS Code 8541.10.0080
-Mounting Style Through Hole
-Blocking Voltage (VR) 3300 V
-Reverse Recovery Time (trr) 0 ns
-Forward Voltage (VF) (Typical) (25°C) 1.7 V
-Maximum Operating Temperature 175℃
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

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