| -Width: |
5.21 mm |
| -Rds On - Drain-Source Resistance: |
20 mOhms |
| -Minimum Operating Temperature: |
- 55 C |
| -Technology: |
Si |
| -Package / Case: |
ISOPLUS-i4-5 |
| -Height: |
21.34 mm |
| -Vgs - Gate-Source Voltage: |
30 V |
| -Mounting Style: |
Through Hole |
| -Fall Time: |
18 ns |
| -Length: |
20.29 mm |
| -Manufacturer: |
IXYS |
| -Transistor Polarity: |
N-Channel |
| -Brand: |
IXYS |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
53 A |
| -Rise Time: |
16 ns |
| -Transistor Type: |
2 N-Channel |
| -ECCN |
EAR99 |
| -Packaging: |
Tube |
| -Qg - Gate Charge: |
150 nC |
| -Pd - Power Dissipation: |
180 W |
| -Tradename: |
TrenchT2 |
| -Vgs th - Gate-Source Threshold Voltage: |
4.5 V |
| -Configuration: |
Dual |
| -Unit Weight: |
0.229281 oz |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
33 ns |
| -Forward Transconductance - Min: |
75 S |
| -Series: |
FMM110-015X2F |
| -Factory Pack Quantity: |
25 |
| -Typical Turn-Off Delay Time: |
33 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
150 V |
| -Type: |
TrenchT2 HiperFET N-Channel Power MOSFET |
| -Maximum Operating Temperature: |
+ 175 C |
