| -Rds On - Drain-Source Resistance: |
20 mOhms |
| -Product: |
MOSFET |
| -Minimum Operating Temperature: |
- 40 C |
| -Technology: |
Si |
| -Vgs th - Gate-Source Threshold Voltage: |
2.5 V |
| -Vgs - Gate-Source Voltage: |
20 V |
| -Number of Channels: |
2 Channel |
| -Typical Turn-On Delay Time: |
8 ns |
| -Transistor Polarity: |
N-Channel |
| -Channel Mode: |
Enhancement |
| -Typical Turn-Off Delay Time: |
24 ns |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
33 V |
| -Transistor Type: |
2 N-Channel |
| -Packaging: |
Reel |
| -Qg - Gate Charge: |
3.8 nC |
| -Pd - Power Dissipation: |
1 W |
| -Package / Case: |
WMini-8-F1 |
| -Configuration: |
Dual |
| -Mounting Style: |
SMD/SMT |
| -Fall Time: |
9 ns |
| -Manufacturer: |
Panasonic |
| -Factory Pack Quantity: |
3000 |
| -Brand: |
Panasonic |
| -RoHS: |
Details |
| -Id - Continuous Drain Current: |
6.5 A |
| -Rise Time: |
3 ns |
| -Maximum Operating Temperature: |
+ 85 C |
