| -FET Feature |
Standard |
| -Package / Case |
Die |
| -Supplier Device Package |
Die |
| -Gate Charge (Qg) @ Vgs |
11.6nC @ 5V |
| -Category |
Discrete Semiconductor Products |
| -FET Type |
GaNFET N-Channel, Gallium Nitride |
| -Family |
Transistors - FETs, MOSFETs - Single |
| -Mounting Type |
Surface Mount |
| -Input Capacitance (Ciss) @ Vds |
1200pF @ 20V |
| -Rds On (Max) @ Id, Vgs |
4 mOhm @ 33A, 5V |
| -Drain to Source Voltage (Vdss) |
40V |
| -Current - Continuous Drain (Id) @ 25°C |
33A (Ta) |
| -Part Status |
Active |
| -Manufacturer |
EPC |
| -Series |
eGaN® |
| -Vgs(th) (Max) @ Id |
2.5V @ 9mA |
| -Operating Temperature |
-40°C ~ 150°C (TJ) |
| -Packaging |
Cut Tape (CT) |
