-Packaging: |
Reel |
-Width: |
1.2 mm |
-Pd - Power Dissipation: |
150 mW |
-Height: |
0.5 mm |
-Configuration: |
Dual |
-Emitter- Base Voltage VEBO: |
7 V |
-DC Current Gain hFE Max: |
560 |
-Continuous Collector Current: |
150 mA |
-Manufacturer: |
ROHM Semiconductor |
-Transistor Polarity: |
NPN |
-Brand: |
ROHM Semiconductor |
-Product Category: |
Bipolar Transistors - BJT |
-Maximum Operating Temperature: |
+ 150 C |
-Operating Temperature |
150°C (TJ) |
-Categories |
Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays |
-Voltage - Collector Emitter Breakdown (Max) |
50V |
-Supplier Device Package |
EMT6 |
-Package / Case |
SOT-563, SOT-666 |
-Part Status |
Active |
-DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 1mA, 6V |
-Base Part Number |
*MX1 |
-Collector- Base Voltage VCBO: |
60 V |
-Minimum Operating Temperature: |
- 55 C |
-Package / Case: |
EMT-6 |
-Gain Bandwidth Product fT: |
180 MHz |
-Mounting Style: |
SMD/SMT |
-Maximum DC Collector Current: |
0.15 A |
-Length: |
1.6 mm |
-DC Collector/Base Gain hfe Min: |
120 |
-Series: |
EMX1 |
-Factory Pack Quantity: |
8000 |
-RoHS: |
Details |
-Collector- Emitter Voltage VCEO Max: |
50 V |
-ECCN |
EAR99 |
-Frequency - Transition |
180MHz |
-Current - Collector (Ic) (Max) |
150mA |
-Vce Saturation (Max) @ Ib, Ic |
400mV @ 5mA, 50mA |
-Transistor Type |
2 NPN (Dual) |
-Power - Max |
150mW |
-Manufacturer |
Rohm Semiconductor |
-Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
-RoHS |
Lead free / RoHS Compliant |