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EMX18T2R

http://www.ameya360.com/product/515359

Manufacturer ROHM Semiconductor
MPN EMX18T2R
SPQ 8000
ECCN --
Schedule B --
RoHS --
Datasheet EMX18T2R.pdf EMX18T2R.pdf EMX18T2R.pdf
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Stock num 100
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SP1027
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Stock type SP1027
Stock num 7845
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500+ $0.7874
1000+ $0.52235
SP1028
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Stock type SP1028
Stock num 77
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100+ $0.11935
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SP1034
Dollar $0.43118
RMB ¥3.58123
Stock type SP1034
Stock num 7925
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2000+ $0.41825
4000+ $0.4056
SP1034
Dollar $0.16499
RMB ¥1.37035
Stock type SP1034
Stock num 7925
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8000+ $0.16499
16000+ $0.1618
32000+ $0.15693
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RMB ¥3.47384
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Stock num 7925
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4000+ $0.4056

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Product parameter

-DC Current Gain hFE Max: 270 at 10 mA at 2 V
-Maximum DC Collector Current: 0.5 A
-Packaging: Reel
-Length: 1.6 mm
-Manufacturer: ROHM Semiconductor
-Pd - Power Dissipation: 150 mW
-Transistor Polarity: NPN
-Brand: ROHM Semiconductor
-Package / Case: EMT
-Collector- Emitter Voltage VCEO Max: 12 V
-Height: 0.5 mm
-Mounting Style: SMD/SMT
-Operating Temperature 150°C (TJ)
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays
-Voltage - Collector Emitter Breakdown (Max) 12V
-Supplier Device Package EMT6
-Package / Case SOT-563, SOT-666
-Part Status Active
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Emitter- Base Voltage VEBO: 6 V
-Width: 1.2 mm
-Collector- Base Voltage VCBO: 15 V
-DC Collector/Base Gain hfe Min: 270
-Series: EMX18
-Minimum Operating Temperature: - 55 C
-Factory Pack Quantity: 8000
-RoHS:  Details
-Product Category: Bipolar Transistors - BJT
-Gain Bandwidth Product fT: 320 MHz
-Configuration: Dual
-Maximum Operating Temperature: + 150 C
-Frequency - Transition 320MHz
-Current - Collector (Ic) (Max) 500mA
-Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 200mA
-Transistor Type 2 NPN (Dual)
-Power - Max 150mW
-DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 10mA, 2V
-Base Part Number *MX18

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