-DC Current Gain hFE Max: |
270 at 10 mA at 2 V |
-Maximum DC Collector Current: |
0.5 A |
-Packaging: |
Reel |
-Length: |
1.6 mm |
-Manufacturer: |
ROHM Semiconductor |
-Pd - Power Dissipation: |
150 mW |
-Transistor Polarity: |
NPN |
-Brand: |
ROHM Semiconductor |
-Package / Case: |
EMT |
-Collector- Emitter Voltage VCEO Max: |
12 V |
-Height: |
0.5 mm |
-Mounting Style: |
SMD/SMT |
-Operating Temperature |
150°C (TJ) |
-Categories |
Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays |
-Voltage - Collector Emitter Breakdown (Max) |
12V |
-Supplier Device Package |
EMT6 |
-Package / Case |
SOT-563, SOT-666 |
-Part Status |
Active |
-Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
-Emitter- Base Voltage VEBO: |
6 V |
-Width: |
1.2 mm |
-Collector- Base Voltage VCBO: |
15 V |
-DC Collector/Base Gain hfe Min: |
270 |
-Series: |
EMX18 |
-Minimum Operating Temperature: |
- 55 C |
-Factory Pack Quantity: |
8000 |
-RoHS: |
Details |
-Product Category: |
Bipolar Transistors - BJT |
-Gain Bandwidth Product fT: |
320 MHz |
-Configuration: |
Dual |
-Maximum Operating Temperature: |
+ 150 C |
-Frequency - Transition |
320MHz |
-Current - Collector (Ic) (Max) |
500mA |
-Vce Saturation (Max) @ Ib, Ic |
250mV @ 10mA, 200mA |
-Transistor Type |
2 NPN (Dual) |
-Power - Max |
150mW |
-DC Current Gain (hFE) (Min) @ Ic, Vce |
270 @ 10mA, 2V |
-Base Part Number |
*MX18 |