| -Frequency - Transition |
250MHz |
| -Current - Collector (Ic) (Max) |
100mA |
| -Voltage - Collector Emitter Breakdown (Max) |
50V |
| -Supplier Device Package |
EMT6 |
| -Package / Case |
SOT-563, SOT-666 |
| -Part Status |
Active |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 1mA, 5V |
| -Base Part Number |
*MH4 |
| -Categories |
Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| -Resistor - Base (R1) |
10 kOhms |
| -Vce Saturation (Max) @ Ib, Ic |
300mV @ 1mA, 10mA |
| -Transistor Type |
2 NPN - Pre-Biased (Dual) |
| -Power - Max |
150mW |
| -Current - Collector Cutoff (Max) |
500nA (ICBO) |
| -Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
