| -Width: |
1.2 mm |
| -Emitter- Base Voltage VEBO: |
5 V |
| -Packaging: |
Reel |
| -Continuous Collector Current: |
100 mA |
| -DC Collector/Base Gain hfe Min: |
100 |
| -Series: |
EMH3 |
| -Minimum Operating Temperature: |
- 55 C |
| -Factory Pack Quantity: |
8000 |
| -RoHS: |
Details |
| -Product Category: |
Bipolar Transistors - Pre-Biased |
| -Height: |
0.5 mm |
| -Mounting Style: |
SMD/SMT |
| -Frequency - Transition |
250MHz |
| -Current - Collector (Ic) (Max) |
100mA |
| -Voltage - Collector Emitter Breakdown (Max) |
50V |
| -Supplier Device Package |
EMT6 |
| -Package / Case |
SOT-563, SOT-666 |
| -Part Status |
Active |
| -DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 1mA, 5V |
| -Base Part Number |
*MH3 |
| -DC Current Gain hFE Max: |
600 |
| -Peak DC Collector Current: |
100 mA |
| -Typical Input Resistor: |
4.7 kOhms |
| -Length: |
1.6 mm |
| -Manufacturer: |
ROHM Semiconductor |
| -Pd - Power Dissipation: |
150 mW |
| -Transistor Polarity: |
NPN |
| -Brand: |
ROHM Semiconductor |
| -Package / Case: |
EMT-6 |
| -Collector- Emitter Voltage VCEO Max: |
50 V |
| -Configuration: |
Dual |
| -Maximum Operating Temperature: |
+ 150 C |
| -Categories |
Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| -Resistor - Base (R1) |
4.7 kOhms |
| -Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
| -Transistor Type |
2 NPN - Pre-Biased (Dual) |
| -Power - Max |
150mW |
| -Manufacturer |
Rohm Semiconductor |
| -Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
