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EMH2T2R

http://www.ameya360.com/product/514688

Manufacturer ROHM Semiconductor
MPN EMH2T2R
SPQ 8000
ECCN EAR99
Schedule B --
RoHS RoHS Compliant
Datasheet EMH2T2R.pdf EMH2T2R.pdf EMH2T2R.pdf
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Product parameter

-Packaging: Reel
-Width: 1.2 mm
-Continuous Collector Current: 100 mA
-DC Collector/Base Gain hfe Min: 68
-Typical Resistor Ratio: 1
-Pd - Power Dissipation: 150 mW
-Transistor Polarity: NPN
-Brand: ROHM Semiconductor
-Package / Case: EMT-6
-Collector- Emitter Voltage VCEO Max: 50 V
-Configuration: Dual
-Maximum Operating Temperature: + 150 C
-Frequency - Transition 250MHz
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Supplier Device Package EMT6
-Package / Case SOT-563, SOT-666
-Part Status Active
-Current - Collector Cutoff (Max) 500nA
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-RoHS Lead free / RoHS Compliant
-Peak DC Collector Current: 100 mA
-Typical Input Resistor: 47 kOhms
-Length: 1.6 mm
-Manufacturer: ROHM Semiconductor
-Series: EMH2
-Minimum Operating Temperature: - 55 C
-Factory Pack Quantity: 8000
-RoHS:  Details
-Product Category: Bipolar Transistors - Pre-Biased
-Height: 0.5 mm
-Mounting Style: SMD/SMT
-ECCN EAR99
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Resistor - Base (R1) 47 kOhms
-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
-Transistor Type 2 NPN - Pre-Biased (Dual)
-Power - Max 150mW
-Manufacturer Rohm Semiconductor
-DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
-Base Part Number *MH2

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