English 简体中文 日本語

EMG6T2R

TRANS 2NPN PREBIAS 0.15W EMT5

Manufacturer ROHM Semiconductor
MPN EMG6T2R
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet EMG6T2R.pdf EMG6T2R.pdf EMG6T2R.pdf

Quote

Demand quantity Target price
Contact number name
company email

Product parameter

-Resistor - Base (R1) (Ohms) 47k
-Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
-Power - Max 150mW
-Supplier Device Package EMT5
-Part Status Active
-Manufacturer Rohm Semiconductor
-Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA (ICBO)
-Packaging Digi-Reel®
-Resistor - Base (R1) 47 kOhms
-Base Part Number *MG6
-Frequency - Transition 250MHz
-Package / Case 6-SMD (5 Leads), Flat Lead
-Transistor Type 2 NPN - Pre-Biased (Dual)
-Current - Collector (Ic) (Max) 100mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Moisture Sensitivity Level (MSL) 1 (Unlimited)

Copyright © 1997-2013 NetEase. All Rights Reserved.