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EMD5T2R

TRANS NPN/PNP PREBIAS 0.15W EMT6

Manufacturer ROHM Semiconductor
MPN EMD5T2R
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet EMD5T2R.pdf EMD5T2R.pdf EMD5T2R.pdf
SP1027
Dollar $0.10881
RMB ¥0.90374
Stock type SP1027
Stock num 7671
Stepped
num price
1042+ $0.10881
2500+ $0.10556
5000+ $0.10277
SP1028
Dollar $0.08215
RMB ¥0.68231
Stock type SP1028
Stock num 7671
Stepped
num price
1+ $0.08215
10+ $0.07905
50+ $0.0775
100+ $0.0744
500+ $0.0744
1000+ $0.0744
2000+ $0.0744
4000+ $0.0744

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Product parameter

-Peak DC Collector Current: 100 mA
-Number of Channels: 2 Channel
-Typical Input Resistor: 47 kOhms, 4.7 kOhms
-Length: 1.6 mm
-Manufacturer: ROHM Semiconductor
-Series: EMD5
-Minimum Operating Temperature: - 55 C
-Factory Pack Quantity: 8000
-RoHS:  Details
-Product Category: Bipolar Transistors - Pre-Biased
-Height: 0.5 mm
-Mounting Style: SMD/SMT
-Frequency - Transition 250MHz
-Current - Collector (Ic) (Max) 100mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Supplier Device Package EMT6
-Package / Case SOT-563, SOT-666
-Part Status Active
-Current - Collector Cutoff (Max) 500nA
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Width: 1.2 mm
-Packaging: Reel
-Continuous Collector Current: 100 mA
-DC Collector/Base Gain hfe Min: 68, 30
-Typical Resistor Ratio: 1, 2.1
-Pd - Power Dissipation: 150 mW
-Transistor Polarity: NPN, PNP
-Brand: ROHM Semiconductor
-Package / Case: EMT-6
-Collector- Emitter Voltage VCEO Max: 50 V
-Configuration: Dual
-Maximum Operating Temperature: + 150 C
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Resistor - Base (R1) 47 kOhms, 4.7 kOhms
-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
-Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
-Power - Max 150mW
-Manufacturer Rohm Semiconductor
-DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V / 30 @ 10mA, 5V
-Base Part Number *MD5

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