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EMD30T2R

TRANS NPN/PNP PREBIAS 0.15W EMT6

制造商 ROHM Semiconductor
制造商零件编号 EMD30T2R
标准包装 8000
ECCN --
Schedule B --
RoHS --
规格说明书 EMD30T2R.pdf

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产品参数

-Resistor - Base (R1) (Ohms) 10k, 1k
-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA / 300mV @ 2.5mA, 50mA
-Power - Max 150mW
-Resistor - Emitter Base (R2) (Ohms) 10k
-Current - Collector (Ic) (Max) 100mA, 200mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V, 30V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V / 140 @ 100mA, 2V
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Frequency - Transition 250MHz, 260MHz
-Package / Case SOT-563, SOT-666
-Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
-Supplier Device Package EMT6
-Part Status Not For New Designs
-Manufacturer Rohm Semiconductor
-Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Packaging Digi-Reel®
-Resistor - Base (R1) 10 kOhms, 1 kOhms
-Base Part Number *MD30

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