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EMB6T2R

TRANS 2PNP PREBIAS 0.15W EMT6

Manufacturer ROHM Semiconductor
MPN EMB6T2R
SPQ 8000
ECCN --
Schedule B --
RoHS --
Datasheet EMB6T2R.pdf

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Product parameter

-Resistor - Base (R1) (Ohms) 47k
-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
-Power - Max 150mW
-Resistor - Emitter Base (R2) (Ohms) 47k
-Current - Collector (Ic) (Max) 30mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Frequency - Transition 250MHz
-Package / Case SOT-563, SOT-666
-Transistor Type 2 PNP - Pre-Biased (Dual)
-Supplier Device Package EMT6
-Part Status Not For New Designs
-Manufacturer Rohm Semiconductor
-Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Current - Collector Cutoff (Max) 500nA
-Packaging Tape & Reel (TR)
-Resistor - Base (R1) 47 kOhms
-Base Part Number MB6

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