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EMB3T2R

TRANS 2PNP PREBIAS 0.15W EMT6

制造商 ROHM Semiconductor
制造商零件编号 EMB3T2R
标准包装 1
ECCN --
Schedule B --
RoHS --
规格说明书 EMB3T2R.pdf EMB3T2R.pdf EMB3T2R.pdf

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产品参数

-Resistor - Base (R1) (Ohms) 4.7k
-Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 5mA
-Power - Max 150mW
-Supplier Device Package EMT6
-Part Status Active
-Manufacturer Rohm Semiconductor
-Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Frequency - Transition 250MHz
-Package / Case SOT-563, SOT-666
-Transistor Type 2 PNP - Pre-Biased (Dual)
-Current - Collector (Ic) (Max) 100mA
-Category Discrete Semiconductor Products
-Voltage - Collector Emitter Breakdown (Max) 50V
-Mounting Type Surface Mount
-Packaging Tape & Reel (TR)
-Resistor - Base (R1) 4.7 kOhms
-Base Part Number MB3

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