| -Supplier Device Package |
EMT6 |
| -Operating Temperature |
150°C (TJ) |
| -Power - Max |
120mW |
| -FET 类型 |
2 个 N 沟道（双） |
| -Drain to Source Voltage (Vdss) |
50V |
| -FET Type |
2 N-Channel (Dual) |
| -FET Feature |
Logic Level Gate, 0.9V Drive |
| -Rds On (Max) @ Id, Vgs |
2.2 Ohm @ 200mA, 4.5V |
| -FET Type |
2 N-Channel (Dual) |
| -Mounting Type |
Surface Mount |
| -Drain to Source Voltage (Vdss) |
50V |
| -Power - Max |
120mW |
| -Packaging |
Tape & Reel (TR) |
| -Current - Continuous Drain (Id) @ 25°C |
200mA |
| -Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| -Input Capacitance (Ciss) @ Vds |
26pF @ 10V |
| -Mounting Type |
Surface Mount |
| -Vgs(th) (Max) @ Id |
800mV @ 1mA |
| -FET 功能 |
逻辑电平栅极，0.9V 驱动 |
| -Vgs(th) (Max) @ Id |
800mV @ 1mA |
| -Current - Continuous Drain (Id) @ 25°C |
200mA |
| -Categories |
Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| -Package / Case |
SOT-563, SOT-666 |
| -Input Capacitance (Ciss) (Max) @ Vds |
26pF @ 10V |
| -Supplier Device Package |
EMT6 |
| -Package / Case |
SOT-563, SOT-666 |
| -Manufacturer |
Rohm Semiconductor |
| -Part Status |
Active |
| -Lead Free Status / RoHS Status |
1 |
| -RoHS |
Lead free / RoHS Compliant |
