| -Packaging: |
Reel |
| -Number of Channels: |
2 Channel |
| -Qg - Gate Charge: |
1.4 nC |
| -Series: |
EM6J1 |
| -Transistor Polarity: |
P-Channel |
| -Technology: |
Si |
| -RoHS: |
Details |
| -Product Category: |
MOSFET |
| -Vds - Drain-Source Breakdown Voltage: |
- 20 V |
| -Transistor Type: |
2 P-Channel |
| -Operating Temperature |
150°C (TJ) |
| -Categories |
Discrete Semiconductor Products -> Transistors - FETs, MOSFETs - Arrays |
| -Mounting Type |
Surface Mount |
| -Rds On (Max) @ Id, Vgs |
1.2 Ohm @ 200mA, 4.5V |
| -Supplier Device Package |
EMT6 |
| -Package / Case |
SOT-563, SOT-666 |
| -Current - Continuous Drain (Id) @ 25°C |
200mA |
| -Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| -RoHS |
Lead free / RoHS Compliant |
| -Product: |
MOSFET Small Signal |
| -Rds On - Drain-Source Resistance: |
1.2 Ohms |
| -Manufacturer: |
ROHM Semiconductor |
| -Pd - Power Dissipation: |
150 mW |
| -Factory Pack Quantity: |
8000 |
| -Brand: |
ROHM Semiconductor |
| -Package / Case: |
EMT-6 |
| -Id - Continuous Drain Current: |
- 200 mA |
| -Configuration: |
Dual |
| -Mounting Style: |
SMD/SMT |
| -FET Feature |
Logic Level Gate |
| -FET Type |
2 P-Channel (Dual) |
| -Input Capacitance (Ciss) (Max) @ Vds |
115pF @ 10V |
| -Vgs(th) (Max) @ Id |
1V @ 100µA |
| -Drain to Source Voltage (Vdss) |
20V |
| -Power - Max |
150mW |
| -Lead Free Status / RoHS Status |
1 |
| -Base Part Number |
*J1 |
