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DTA114EEBTL

TRANS PREBIAS PNP 150MW EMT3

Manufacturer ROHM Semiconductor
MPN DTA114EEBTL
SPQ 1
ECCN --
Schedule B --
RoHS --
Datasheet DTA114EEBTL.pdf DTA114EEBTL.pdf DTA114EEBTL.pdf
SP1027
Dollar $0.08153
RMB ¥0.67716
Stock type SP1027
Stock num 51102
Stepped
num price
1389+ $0.08153
2500+ $0.07921
5000+ $0.07704
10000+ $0.07518
25000+ $0.07347
SP1028
Dollar $0.1147
RMB ¥0.95266
Stock type SP1028
Stock num 51102
Stepped
num price
1+ $0.1147
300+ $0.08835
500+ $0.06975
1000+ $0.0558
4000+ $0.0465
5000+ $0.04495
10000+ $0.04495
30000+ $0.04185

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Product parameter

-Continuous Collector Current: - 100 mA
-Packaging: Reel
-Manufacturer: ROHM Semiconductor
-Series: DTA114EEB
-Transistor Polarity: PNP
-Brand: ROHM Semiconductor
-Package / Case: EMT-3F
-Collector- Emitter Voltage VCEO Max: - 50 V
-Mounting Style: SMD/SMT
-Frequency - Transition 250MHz
-Current - Collector (Ic) (Max) 50mA
-Voltage - Collector Emitter Breakdown (Max) 50V
-Supplier Device Package EMT3
-Package / Case SC-75, SOT-416
-Part Status Not For New Designs
-Current - Collector Cutoff (Max) 500nA
-Moisture Sensitivity Level (MSL) 1 (Unlimited)
-Typical Input Resistor: 10 kOhms
-DC Collector/Base Gain hfe Min: 30
-Typical Resistor Ratio: 1
-Pd - Power Dissipation: 150 mW
-Factory Pack Quantity: 3000
-RoHS:  Details
-Product Category: Bipolar Transistors - Pre-Biased
-Configuration: Single
-Maximum Operating Temperature: + 150 C
-Categories Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Single, Pre-Biased
-Resistor - Base (R1) 10 kOhms
-Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
-Transistor Type PNP - Pre-Biased
-Power - Max 150mW
-Manufacturer Rohm Semiconductor
-DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5mA, 5V
-Base Part Number DTA114

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