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CSD86311W1723

MOSFET 2N-CH 25V 4.5A 12DSBGA

制造商 Texas Instruments
制造商零件编号 CSD86311W1723
标准包装 3000
ECCN --
Schedule B --
RoHS RoHS Compliant
规格说明书 CSD86311W1723.pdf

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产品参数

-FET Feature Logic Level Gate
-Package / Case 12-UFBGA, DSBGA
-Drain to Source Voltage (Vdss) 25V
-Current - Continuous Drain (Id) @ 25°C 4.5A
-Product Training Modules NexFET MOSFET Technology
-FET Type 2 N-Channel (Dual)
-Series NexFET™
-Mounting Type Surface Mount
-Input Capacitance (Ciss) @ Vds 585pF @ 12.5V
-RoHS Lead free / RoHS Compliant
-Rds On (Max) @ Id, Vgs 39 mOhm @ 2A, 8V
-Power - Max 1.5W
-Supplier Device Package 12-DSBGA (1.53x1.98)
-Gate Charge (Qg) @ Vgs 4nC @ 4.5V
-Video File NexFET Power Block PowerStack™ Packaging Technology Overview
-Online Catalog N-Channel Logic Level Gate FETs
-Family FETs - Arrays
-Vgs(th) (Max) @ Id 1.4V @ 250µA
-Packaging Tape & Reel (TR)  

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