CGHV14500F

MOSFET RF

Manufacturer Cree MPN CGHV14500F SPQ 1 ECCN -- Schedule B -- RoHS -- Datasheet --

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Product parameter

-Output Power:	510 W
-Operating Frequency:	1.2 GHz to 1.4 GHz
-Minimum Operating Temperature:	- 40 C
-Package / Case:	440117
-Configuration:	Single
-Gain:	17.1 dB
-Transistor Polarity:	N-Channel
-Brand:	Wolfspeed / Cree
-RoHS:	Details
-Product Category:	RF JFET Transistors
-Vds - Drain-Source Breakdown Voltage:	150 V
-Transistor Type:	HEMT
-Product:	GaN HEMT
-Packaging:	Tube
-Technology:	GaN SiC
-Vgs th - Gate-Source Threshold Voltage:	- 3 V
-Mounting Style:	Screw
-Manufacturer:	Cree, Inc.
-Factory Pack Quantity:	100
-Development Kit:	CGHV14500F-TB
-Vgs - Gate-Source Breakdown Voltage:	- 10 V to + 2 V
-Id - Continuous Drain Current:	36 A
-Type:	GaN SiC HEMT
-Maximum Operating Temperature:	+ 130 C