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| -Output Power: | 10 W |
| -Operating Frequency: | 4.5 GHz to 6 GHz |
| -Packaging: | Tray |
| -Technology: | GaN SiC |
| -Vgs th - Gate-Source Threshold Voltage: | - 3 V |
| -Configuration: | Single |
| -Gain: | 12 dB |
| -Manufacturer: | Cree, Inc. |
| -Factory Pack Quantity: | 58 |
| -RoHS: | Details |
| -Product Category: | RF JFET Transistors |
| -Vds - Drain-Source Breakdown Voltage: | 120 V |
| -Transistor Type: | HEMT |
| -Product: | GaN HEMT |
| -Width: | 4.19 mm |
| -Minimum Operating Temperature: | - 40 C |
| -Package / Case: | 440166 |
| -Height: | 3.43 mm |
| -Mounting Style: | Screw |
| -Length: | 14.09 mm |
| -Transistor Polarity: | N-Channel |
| -Brand: | Wolfspeed / Cree |
| -Vgs - Gate-Source Breakdown Voltage: | - 10 V to + 2 V |
| -Id - Continuous Drain Current: | 1.5 A |
| -Type: | GaN SiC HEMT |
| -Maximum Operating Temperature: | + 150 C |
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